Quantum emission efficiency of nanocrystalline and amorphous Si quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 44, Issue 1, 2011, Pages 56-61

  Torchynska, T V ^a  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; AMORPHOUS SI; CRYSTALLINE SI; EMISSION EFFICIENCIES; NANOCRYSTALLINES; NC-SI:H; NONRADIATIVE RECOMBINATION CENTERS; OXYGEN FLOW; PL BANDS; PL MECHANISM; SI NANOCRYSTAL; SUBSTRATE TEMPERATURE; TECHNOLOGICAL PARAMETERS; WIRE TEMPERATURE; XRD;

AMORPHOUS FILMS; CRYSTALLINE MATERIALS; EFFICIENCY; FILM PREPARATION; METALLIC FILMS; NANOCRYSTALS; PASSIVATION; QUANTUM EFFICIENCY; SEMICONDUCTOR QUANTUM DOTS; SILICON; WIRE; X RAY DIFFRACTION;

AMORPHOUS SILICON;

EID: 80054703390     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2011.07.004     Document Type: Article

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