Formation of light-emitting Si nanostructures in SiO2 by pulsed anneals

Nanotechnology

Volumn 19, Issue 35, 2008, Pages

  Kachurin, G A ^a   Cherkova, S G ^a   Marin, D V ^a   Yankov, R A ^b   Deutschmann, M ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c LASER ZENTRUM HANNOVER E V   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EXCIMER LASERS; GAS LASERS; NANOCRYSTALS; NANOSTRUCTURES; PULSED LASER APPLICATIONS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICON; SILICON COMPOUNDS;

EXCIMER; FLASH LAMP ANNEALING; SI-NANOCRYSTALS;

ANNEALING;

NANOCRYSTAL; NANOMATERIAL; SILICON; SILICON DIOXIDE;

ARTICLE; CALCULATION; CRYSTALLIZATION; EXCIMER LASER; LUMINESCENCE; MATERIALS TESTING; NANOCHEMISTRY; PRIORITY JOURNAL;

EID: 48249126838     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/35/355305     Document Type: Article

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