Role of oxygen migration in the kinetics of the phase separation of nonstoichiometric silicon oxide films during high-temperature annealing

Applied Physics Letters

Volumn 91, Issue 13, 2007, Pages

  Sarikov, A ^a,b   Litovchenko, V ^b   Lisovskyy, I ^b   Maidanchuk, I ^b   Zlobin, S ^b  

^a HAHN MEITNER INSTITUT   (Germany)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; PHASE SEPARATION; PRECIPITATES; SILICON; STOICHIOMETRY;

HIGH-TEMPERATURE ANNEALING; NONSTOICHIOMETRIC SILICON OXIDE FILMS; OXYGEN EMISSION; OXYGEN MIGRATION;

OXIDE FILMS;

EID: 34848867776     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2790814     Document Type: Article

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