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Journal of Applied Physics

Volumn 109, Issue 5, 2011, Pages

Rapid thermal annealing of size-controlled Si nanocrystals: Dependence of interface defect density on thermal budget

(3) Hiller, Daniel a Goetze, Silvana b Zacharias, Margit a

a UNIVERSITY OF FREIBURG (Germany)

b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED SAMPLES; ANNEALING TREATMENTS; CONVENTIONAL TUBES; ELECTRON SPIN RESONANCE; INTERFACE DEFECTS; NC INTERFACE; ORDERS OF MAGNITUDE; PEAK POSITION; PHOTOLUMINESCENCE PROPERTIES; PL INTENSITY; POST ANNEALING; SI NANOCRYSTAL; TEM IMAGES; THERMAL BUDGET; THERMAL TREATMENT; TUBE FURNACES;

BUDGET CONTROL; DEFECTS; FURNACES; NANOCRYSTALS; PASSIVATION; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING;

DEFECT DENSITY;

EID: 79952998499 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3556449 Document Type: Article

Times cited : (28)

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