Sublimation Epitaxial Growth of Hexagonal and Cubic SiC

Comprehensive Semiconductor Science and Technology

Volumn 1-6, Issue , 2011, Pages 202-231

  Syvajarvi M ^a   Yakimova, R ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84897763254     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1016/B978-0-44-453153-7.00092-4     Document Type: Chapter

References (67)

1. Andreev A.N., Smirnova N.Yu., Tregubova A.S., Scheglov M.P., Chelnokov V.E. Structural perfection of epitaxial layers of 3C-SiC grown by vacuum sublimation on 6H-SiC substrates. Semiconductors 1997, 31:232-236.
2. Andreev A.N., Tregubova A.S., Scheglov M.P., Syrkin A.L., Chelnokov V.E. Influence of growth conditions on the structural perfection of β-SiC epitaxial layers fabricated on 6H-SiC substrates by vacuum sublimation. Materials Science and Engineering 1997, B46:141-146.
3. Bennema P., Gilmer G.H. Kinetics of crystal growth. Crystal Growth: An Introduction 1973, 363. North Holland, Amsterdam, 327. P. Hartman (Ed.).
4. Chien F.R., Nutt S.R., Yoo W.S., Kimoto T., Matsunami H. Terrace growth and polytype development in epitaxial β-SiC films on α-SiC (6H and 15R) substrates. Journal of Materials Research 1994, 9:940-954.
5. Drowart J., de Maria G. Thermodynamic study of SiC utilizing a mass spectrometer. Journal of Chemical Physics 1958, 29:1015-1018.
6. Fissel A. Thermodynamic considerations of the epitaxial growth of SiC polytypes. Journal of Crystal Growth 2000, 212:438-450.
7. Glass R.C., Kjellberg L.O., Tsvetkov V.F., Sundgren J.E., Janzén E. Structural macro-defects in 6H-SiC wafers. Journal of Crystal Growth 1993, 132:504-512.
8. Hofmann D., Karpov S.Yu., Makarov Yu.N., et al. Use of Ta container material for quality improvement of SiC crystals grown by the sublimation technique. Institute of Physics Conference Series 1996, 142:29-32.
9. Jackson K.A. Liquid Metals and Solidification 1958, American Society for Metals, Materials Park, OH, 174pp.
10. Jacobson H., Birch J., Yakimova R., et al. Dislocation evolution in 4H-SiC epitaxial layers. Journal of Applied Physics 2002, 91:6354-6360.
11. Kamata I., Tsuchida H., Jikimota T., Izumi K. Micropipe closing via thick 4H-SiC epitaxial growth involving structural transformation of screw dislocations. Materials Science Forum 2001, 353-356:311-314.
12. Karpov S.Yu., Makarov Yu.N., Mokhov E.N., et al. Analysis of silicon carbide growth by sublimation sandwich method. Journal of Crystal Growth 1997, 173:408-416.
13. Karpov S.Yu., Makarov Yu.N., Ramm M.S., Talalaev R.A. Excess phase formation during sublimation growth of silicon carbide. Institute of Physics Conference Series 1996, 142:69-72.
14. Kimoto T., Itoh A., Matsunami H. Step bunching in chemical vapor deposition of 6H- and 4H-SiC on vicinal SiC(0001) faces. Applied Physics Letters 1995, 66:3645-3647.
15. Kimoto T., Itoh A., Matsunami H., Okano T. Step bunching mechanism in chemical vapor deposition of 6H- and 4H-SiC(0001). Journal of Applied Physics 1997, 81:3494-3500.
16. Kimoto T., Matsunami H. Nucleation and step motion in chemical vapor deposition of SiC on 6H-SiC(0001) faces. Journal of Applied Physics 1994, 76:7322-7327.
17. Knippenberg W.F. Growth phenomena in silicon carbide. Philips Research Report 1963, 18:161-274.
18. Kong H.S., Glass J.T., Davis R.F. Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates. Journal of Applied Physics 1988, 65:2672-2679.
19. Krug J., Tonchev V., Stoyanov S., Pimpinelli A. Scaling properties of step bunches induced by sublimation and related mechanisms. Physical Review B 2005, 71:45412-45415.
20. Latu-Romain L., Chaussende D., Chaudouet P., et al. Study of 3C-SiC nucleation on (0001) 6H-SiC nominal surfaces by the CF-PVT method. Journal of Crystal Growth 2005, 275:e609-e613.
21. Lebedev A.A., Chelnokov V.E. Measurement of electrophysical properties of silicon carbide epitaxial films. Diamond and Related Materials 1994, 3:1393-1397.
22. Lebedev A.A., Davydov D.V., Savkina N.S., et al. Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum. Semiconductors 2000, 34:1133-1136.
23. Lely J.A. Darstellung von Einkristallen von Silicium carbid und Beherrschung von art und menge der eingebauten verunreingungen. Berichte der Deutschen Keramischen Gesellschafte 1955, 32:229-236.
24. Maeda K., Suzuki K., Fujita S., Ichihara M., Hyodo S. Defects in plastically deformed 6H SiC single crystals studied by transmission electron microscopy. Philosophical Magazine A 1988, 57:573-592.
25. Mokhov E.N., Ramm M.G., Roenkov A.D., Vodakov Yu.A. Growth of silicon carbide bulk crystals by the sublimation sandwich method. Materials Science Engineering 1997, B46:317-323.
26. Münch W.V. Silicon carbide. Landolt-Börnstein, Numerical Data and Functional Relationships in Science and Technology 1984, vol. III 17c:490-498. Springer, Berlin. M. Schulz, H. Weiss (Eds.).
27. Myslivecek J., Schelling C., Schäffler F., et al. On the microscopic origin of the kinetic step bunching instability on vicinal Si(001). Surface Science 2002, 520:193-206.
28. Nikolaev A.E., Ivantsov V.A., Rendakova S.V., Mlashenkov M.N., Dmitriev V.A. SiC liquid-phase epitaxy on patterned substrates. Journal of Crystal Growth 1996, 166:607-611.
29. Nishino S., Higashino T., Tanaka T., Saraie J. Growth mechanism and defects in SiC prepared by sublimation method. Journal of Crystal Growth 1995, 147:339-342.
30. Nishino S., Matsumoto K., Yoshida T., Chen Y., Lilov S.K. Epitaxial growth of 4H-SiC by sublimation close space technique. Materials Science Engineering 1999, B61-B62:121-124.
31. Pimpinelli A., Villain J. Physics of Crystal Growth 1998, Cambridge University Press, Cambridge, p. 9 (ISBN 0 521 55198 6).
32. Porter D.A., Easterling K.E. Phase Transformations in Metals and Solids 1981, Chapman and Hall, London, p. 115.
33. Powell J.A., Larkin D.J. Process-induced morphological defects in epitaxial CVD silicon carbide. Physica Status Solidi (b) 1997, 202:529-548.
34. Råback P (1999) Modeling of the sublimation growth of silicon carbide crystals. PhD Thesis, Helsinki University of Technology, Espoo.
35. Savkina N., Tregubova A., Scheglov M., Solov'ev V., Volkova A., Lebedev A. Characterization of 3C-SiC epilayers grown on 6H-SiC substrates by vacuum sublimation. Materials Science Engineering 2002, B91-B92:317-320.
36. Savkina N.S., Lebedev A.A., Davydov D.V., Strel'chuk A.M., Tregubova A.S., Yagovkina M.A. New results in sublimation growth of the SiC epilayers. Materials Science Engineering 1999, B61-B62:165-167.
37. Savkina N.S., Lebedev A.A., Davydov D.V., et al. Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy. Materials Science Engineering 2000, B77:50-54.
38. Schulz D., Lechner M., Rost H.J., Siche D., Wollweber J. On the early stages of sublimation growth of 4H-SiC using 8° off-oriented substrates. Materials Science Forum 2003, 433-436:17-20.
39. Shibahara K., Kuroda N., Nishino S., Matsunami H. Fabrication of P-N junction diodes using homoepitaxially grown 6H-SiC at low-temperature by chemical vapor deposition. Japanese Journal of Applied Physics 1987, 26:L1815-L1817.
40. Sorokin L.M., Tregubova A.S., Shcheglov M.P., Lebedev A.A., Savkina N.S. Structural defects in 6H-SiC substrates and their effect on the sublimation growth of epitaxial layers in vacuum. Physics of the Solid State 2000, 42:1422-1426.
41. Soueidan M., Ferro G., Kim-Hak O., et al. Nucleation of 3C-SiC on 6H-SiC from a liquid phase. Acta Materialia 2007, 55:6873-6880.
42. Morphology of Crystals 1987, 515. Terra Scientific, Tokyo. I. Sunagawa (Ed.).
43. Syväajärvi M (1999a) High growth rate epitaxy of SiC: growth process and structural quality. PhD Thesis, Linköping University, Linköping.
44. Syväjärvi M., Sritirawisarn N., Yakimova R. Initial growth in 3C-SiC sublimation epitaxy on 6H-SiC. Materials Science Forum 2006, 556-557:195-198.
45. Syväjärvi M., Sritirawisarn N., Yakimova R. Initial growth in 3C-SiC sublimation epitaxy on 6H-SiC. Materials Science Forum 2007, 556-557:195-198.
46. Syväjärvi M., Yakimova R., Jacobson H., Janzén E. Structural improvement in sublimation epitaxy of 4H-SiC. Journal of Applied Physics 2000, 88:1407-1411.
47. Syväjärvi M., Yakimova R., Jacobsson H., Janzén E. Growth of 3C-SiC using off-oriented 6H-SiC substrates. Materials Science Forum 2000, 143:353-356.
48. Syväjärvi M., Yakimova R., Janzén E. Interfacial properties in liquid phase growth of SiC. Journal of the Electrochemical Society 1999, 146:1565-1569.
49. Syväjärvi M., Yakimova R., Janzén E. Step-bunching in SiC epitaxy: Anisotropy and influence of growth temperature. Journal of Crystal Growth 2002, 236:297-304.
50. Syväjärvi M., Yakimova R., Radamson H.H., et al. Liquid phase epitaxial growth of SiC. Journal of Crystal Growth 1999, 197:147-154.
51. Syväjärvi M., Yakimova R., Tuominen M., et al. Growth of 6H and 4H-SiC by sublimation epitaxy. Journal of Crystal Growth 1999, 197:155-162.
52. Tairov Yu.M. Growth of bulk SiC. Materials Science Engineering 1995, B29:83-89.
53. Tairov Yu.M., Tsvetkov V.F. Investigation of growth processes of ingots of silicon carbide single crystals. Journal of Crystal Growth 1978, 43:209-212.
54. Tairov Yu., Tsvetkov V.F., Lilov S.K., Safaraliev G.K. Studies of growth kinetics and polytypism of silicon carbide epitaxial layers grown from the vapour phase. Journal of Crystal Growth 1976, 36:147-151.
55. Tiller W.A. The Science of Crystallization: Microscopical Interfacial Phenomena 1990, Cambridge University Press, Cambridge.
56. Tuominen M., Yakimova R., Glass R.C., Tuomi T., Janzén E. Crystalline imperfections in 4H SiC grown with a seeded Lely method. Journal of Crystal Growth 1994, 144:267-276.
57. Tuominen M., Yakimova R., Glass R.C., Tuomi T., Janzén E. Defect analysis in Lely-grown 6H SiC. Journal of Crystal Growth 1996, 165:233-244.
58. Vasiliauskas R., Syväjärvi M., Beshkova M., Yakimova R. Two-dimensional nucleation of cubic and 6H silicon carbide. Materials Science Forum 2009, 615-617:189-192.
59. Vodakov Yu.A., Mokhov E.N., Ramm M.G., Roenkov A.D. Epitaxial growth of silicon carbide layers by sublimation 'sandwich method'. I. Growth kinetics in vacuum. Kristall und Technik 1979, 14:729.
60. Vodakov Yu., Roenkov A.D., Ramm M.G., Mokhov E.N., Makarov Yu.N. Use of Ta-container for sublimation growth and doping of SiC bulk crystals and epitaxial layers. Physica Status Solidi (b) 1997, 202:177-200.
61. Wagner G., Schulz D., Doerschel J. Structural improvement of seeds for bulk crystal growth by using hot-wall CVD of 4H-SiC. Materials Science Forum 2005, 483-485:109-112.
62. Yakimova R., Syväjärvi M., Tuominen M., et al. Seeded sublimation growth of 6H and 4H-SiC crystals. Materials Science and Engineering B 1998, 61-62.
63. Yakimova R., Syväjärvi M., Iakimov T., et al. Polytype stabilityin seeded sublimation growth of 4H-SiC boules. Journal of Crystal Growth 2000, 217:255-262.
64. Yakimova R., Syväjärvi M., Rendakova S., Dmitriev V., Henry A., Janzén E. Micropipe healing in liquid phase epitaxial growth of SiC. Materials Science Forum 2000, 338-342:237-240.
65. Yakimova R., Tuominen M., Bakin A.S., Fornell J.O., Vehanen A., Janzén E. Silicon carbide liquid phase epitaxy in the Si-Sc-C system. Institute of Physics Conference Series 1996, 142:101-104.
66. Yakimova R., Yazdi G.R., Sritirawisarn N., Syväjärvi M. Structure evolution of 3C-SiC on cubic and hexagonal substrates. Materials Science Forum 2005, 527-529:283-286.
67. Yakimova R., Yazdi G.R., Sritirawisarn N., Syväjärvi M. Structure evolution of 3C-SiC on cubic and hexagonal substrates. Materials Science Forum 2006, 527-529:283-286.