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Volumn 433-436, Issue , 2003, Pages 17-20
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On the Early Stages of Sublimation Growth of 4H-SiC Using 8° Off-Oriented Substrates
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Author keywords
4H SiC; Physical Vapor Transport; Single Crystal Growth; Surface Morphology
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Indexed keywords
CRYSTAL DEFECTS;
CRYSTAL GROWTH;
DOPING (ADDITIVES);
EPITAXIAL GROWTH;
MORPHOLOGY;
OPTICAL MICROSCOPY;
PRESSURE REGULATION;
SINGLE CRYSTALS;
SUBLIMATION;
SUBSTRATES;
PHYSICAL VAPOR TRANSPORT;
SILICON CARBIDE;
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EID: 0242413835
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.433-436.17 Document Type: Conference Paper |
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Times cited : (8)
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References (5)
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