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Volumn 42, Issue 8, 2000, Pages 1422-1426

Structural defects in 6H-SiC substrates and their effect on the sublimation growth of epitaxial layers in vacuum

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[No Author keywords available]

Indexed keywords


EID: 0034336509     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1307045     Document Type: Article
Times cited : (6)

References (8)
  • 2
    • 21344462779 scopus 로고
    • A. N. Andreev, A. S. Tregubova, M. P. Shcheglov, et al., Fiz. Tekh. Poluprovodn. (S.-Peterburg) 29, 1828 (1995) [Semiconductors 29, 955 (1995)].
    • (1995) Semiconductors , vol.29 , pp. 955
  • 4
    • 0001943780 scopus 로고    scopus 로고
    • M. Dudley, W. Si, S. Wang, et al., Nuovo Cimento Soc. Ital. Fis., D 19 (2-4), 153 (1996); in Proceedings of the Third European Symposium on X-ray Topography and High-Resolution Diffraction, Palermo, Italy, 1996, Ed. by C. Bocchi et al. (Societá Italiana di Fisica, Bologna, 1996).
    • (1996) Nuovo Cimento Soc. Ital. Fis., D , vol.19 , Issue.2-4 , pp. 153
    • Dudley, M.1    Si, W.2    Wang, S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.