Step-bunching in SiC epitaxy: Anisotropy and influence of growth temperature

Journal of Crystal Growth

Volumn 236, Issue 1-3, 2002, Pages 297-304

  Syvajarvi M ^a   Yakimova, R ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

A1. Defects; A1. Morphological stability; A1. Surfaces; B1. Organic compounds; B2. Semiconducting silicon compounds

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; FREE ENERGY; INTERFACES (MATERIALS); MORPHOLOGY; SILICON CARBIDE; SUBLIMATION; SUBSTRATES; SURFACE ROUGHNESS;

STEP-BUNCHING;

EPITAXIAL GROWTH;

EID: 0036499088     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02331-4     Document Type: Article

References (14)