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Volumn 81, Issue 8, 1997, Pages 3494-3500

Step bunching mechanism in chemical vapor deposition of 6H-and 4H-SiC{0001}

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001280521     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365048     Document Type: Article
Times cited : (178)

References (29)
  • 7
    • 0006281025 scopus 로고
    • edited by M. G. Spencer, R. P. Devaty, J. A. Edmond, M. A. Khan, R. Kaplan, and M. M. Rahman Institute of Physics, Bristol
    • S. Tyc, Silicon Carbide and Related Materials, edited by M. G. Spencer, R. P. Devaty, J. A. Edmond, M. A. Khan, R. Kaplan, and M. M. Rahman (Institute of Physics, Bristol, 1994) p. 333.
    • (1994) Silicon Carbide and Related Materials , pp. 333
    • Tyc, S.1
  • 20
    • 0002378338 scopus 로고
    • edited by R. H. Doremus, B. W. Roberts, and D. Turnbull Wiley, New York
    • F. C. Frank, Growth and Perfection of Crystals, edited by R. H. Doremus, B. W. Roberts, and D. Turnbull (Wiley, New York, 1958), p. 411.
    • (1958) Growth and Perfection of Crystals , pp. 411
    • Frank, F.C.1
  • 27
    • 3943089611 scopus 로고    scopus 로고
    • P. Henell, M. A. Kulakov, and B. Bullemer, in Ref. 7, p. 353
    • P. Henell, M. A. Kulakov, and B. Bullemer, in Ref. 7, p. 353.
  • 28
    • 3943074943 scopus 로고    scopus 로고
    • J. A. Powell, D. J. Larkin, P. B. Abel, L. Zhou, and P. Pirouz, in Ref. 1, p. 77
    • J. A. Powell, D. J. Larkin, P. B. Abel, L. Zhou, and P. Pirouz, in Ref. 1, p. 77.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.