Structural improvement of seeds for bulk crystal growth by using hot-wall CVD of 4H-SIC

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 109-112

  Wagner, G ^a   Schulz, D ^a   Doerschel, J ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

4H SiC; Epitaxial growth; Micropipe closing; Sublimation growth

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DISSOCIATION; EPITAXIAL LAYERS; HIGH TEMPERATURE EFFECTS; PROPANE; SILANES; SILICON CARBIDE;

EPILAYER GROWN; MICROPIPE CLOSING; MICROPIPE DISSOCIATION; SUBLIMATION GROWTH;

EPITAXIAL GROWTH;

EID: 35148888225     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.109     Document Type: Conference Paper

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