Study of 3C-SiC nucleation on (0 0 0 1) 6H-SiC nominal surfaces by the CF-PVT method

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages

  Latu Romain, L ^a   Chaussende, D ^a   Chaudouet P ^a   Robaut, F ^b   Berthome G ^c   Pons, M ^c   Madar, R ^a  

^a LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^c UNIV GRENOBLE ALPES   (France)

Author keywords

A1. Morphological stability; A1. Nucleation; A2. Growth from vapour; B2. Semiconducting silicon compounds

Indexed keywords

CRYSTAL GROWTH; ENERGY GAP; MORPHOLOGY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; STABILITY; SUBLIMATION; THERMAL EFFECTS;

GROWTH FROM VAPOR; GROWTH RATES; MORPHOLOGICAL STABILITY; POWER DEVICES;

NUCLEATION;

EID: 15844384463     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.005     Document Type: Conference Paper

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