Dislocation evolution in 4H-SiC epitaxial layers

Journal of Applied Physics

Volumn 91, Issue 10 I, 2002, Pages 6354-6360

  Jacobson, H ^a   Birch, J ^a   Yakimova, R ^a   Syvajarvi M ^a   Bergman, J P ^a   Ellison, A ^b   Tuomi, T ^c   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Okmetic AB   (Sweden)

^c AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR DIODES; BLOCK STRUCTURES; CRYSTALLINE STRUCTURE; DISLOCATION EVOLUTION; DOMAIN DISTRIBUTION; FORMATION MECHANISM; GROWN CRYSTALS; HIGH RESOLUTION X RAY DIFFRACTION; LATTICE PLANE; MIS-ORIENTATION; MOSAICITY; ROCKING CURVES; STRUCTURAL QUALITIES; SYNCHROTRON WHITE BEAM X-RAY TOPOGRAPHIES; THREADING EDGE DISLOCATION;

DEGRADATION; EDGE DISLOCATIONS; EPILAYERS; EPITAXIAL GROWTH; SILICON CARBIDE; X RAY DIFFRACTION;

SUBSTRATES;

EID: 0037094785     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1468891     Document Type: Article

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