On the microscopic origin of the kinetic step bunching instability on vicinal Si( 0 0 1 )

Surface Science

Volumn 520, Issue 3, 2002, Pages 193-206

  Myslivecek J ^a   Schelling, C ^b   Schaffler F ^b   Springholz, G ^b   Smilauer P ^c   Krug, J ^d   Voigtlander B ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^c INSTITUTE OF MATHEMATICS   (Czech Republic)

^d UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

Molecular beam epitaxy; Monte Carlo simulations; Scanning tunneling microscopy; Silicon; Step formation and bunching; Surface diffusion; Surface structure, morphology, roughness and topography; Vicinal single crystal surfaces

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; DIFFUSION; MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; THERMAL EFFECTS;

ADATOMS;

SURFACE ROUGHNESS;

EID: 0037153662     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(02)02273-2     Document Type: Article

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