Structural perfection of epitaxial layers of 3C-SiC grown by vacuum sublimation on 6H-SiC substrates

Semiconductors

Volumn 31, Issue 3, 1997, Pages 232-236

  Andreev, A N ^a   Smirnova, N Yu ^a   Tregubova, A S ^a   Shcheglov, M P ^a   Chelnokov, V E ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039921510     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187112     Document Type: Article

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