SiC liquid-phase epitaxy on patterned substrates

Journal of Crystal Growth

Volumn 166, Issue 1-4, 1996, Pages 607-611

  Nikolaev, A E ^a   Ivantsov, V A ^a   Rendakova, S V ^a   Blashenkov, M N ^a   Dmitriev, V A ^a,b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Research Triangle Park   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; FILM GROWTH; LIQUID PHASE EPITAXY; PHOTOLITHOGRAPHY; PHOTOLUMINESCENCE; REACTIVE ION ETCHING; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

CIRCULAR MESA TABLES; CONTAINER FREE LIQUID EPITAXY; GROWTH RATE ANISOTROPY; SQUARE MESA TABLES; X RAY TOPOGRAPHY;

SILICON CARBIDE;

EID: 0030230761     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00566-8     Document Type: Article

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