Micropipe closing via thick 4H-SiC epitaxial growth involving structural transformation of screw dislocations

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 311-314

  Kamata, I ^a   Tsuchida, H ^a   Jikimoto, T ^a   Izumi, K ^a  

^a CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; ETCHING; MORPHOLOGY; OPTICAL MICROSCOPY; PHASE TRANSITIONS; SCANNING ELECTRON MICROSCOPY;

HOLLOW CORE DEFECT; MICROPIPE CLOSING; SCREW DISLOCATIONS; SELECTIVE DEFECT ETCHING TECHNIQUE; STRUCTURAL TRANSFORMATION;

SILICON CARBIDE;

EID: 0035127039     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.311     Document Type: Article

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