메뉴 건너뛰기




Volumn 615 617, Issue , 2009, Pages 189-192

Two-dimensional nucleation of cubic and 6H silicon carbide

Author keywords

2D islands; Epitaxy; Growth; Nucleation; Sublimation

Indexed keywords

EPITAXIAL GROWTH; GROWTH (MATERIALS); NUCLEATION; SUBLIMATION; SUBSTRATES;

EID: 77954729388     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.189     Document Type: Conference Paper
Times cited : (11)

References (6)
  • 2
    • 33646792943 scopus 로고    scopus 로고
    • doi:10.1088/0268-1242/21/6/R01
    • A. A. Lebedev: Semicond. Sci. Technol. Vol. 21 (2006), p. R17 doi:10.1088/0268-1242/21/6/R01.
    • (2006) Semicond. Sci. Technol. , vol.21
    • Lebedev, A.A.1
  • 4
    • 15844384463 scopus 로고    scopus 로고
    • Study of 3C-SiC nucleation on (0 0 0 1) 6H-SiC nominal surfaces by the CF-PVT method
    • DOI 10.1016/j.jcrysgro.2004.11.005, PII S0022024804014873, Proceeedings of the 14th International Conference on Crystal Growth and the 12th International Conference on Vapor Growth and Epitaxy
    • L. Latu-Romain, D. Chaussende, P. Chaudouet, F. Robaut, G. Berthome, M. Pons, R. Madar: Journal of Crystal Growth Vol. 275 (2005), p. 609 doi:10.1016/j.jcrysgro.2004.11.005. (Pubitemid 40421130)
    • (2005) Journal of Crystal Growth , vol.275 , Issue.1-2
    • Latu-Romain, L.1    Chaussende, D.2    Chaudouet, P.3    Robaut, F.4    Berthome, G.5    Pons, M.6    Madar, R.7
  • 6
    • 0000058653 scopus 로고
    • doi:10.1063/1.349795
    • W. S. Yoo and H. Matsunami: J. Appl. Phys. Vol. 10 (1991), p. 7124 doi:10.1063/1.349795.
    • (1991) J. Appl. Phys. , vol.10 , pp. 7124
    • Yoo, W.S.1    Matsunami, H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.