Initial growth in 3C-SiC sublimation epitaxy on 6H-SiC

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 195-198

  Syvajarvi M ^a   Sritirawisarn, N ^b   Yakimova, R ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

3C SiC; Epitaxy; Growth; Thick layers

Indexed keywords

DISSOCIATION; EPITAXIAL GROWTH; GROWTH (MATERIALS); SUBLIMATION; SUBSTRATES;

3C-SIC; DISSOCIATION PROCESS; INITIAL TEMPERATURES; OFF-ORIENTED SUBSTRATES; POLY-TYPE FORMATION; RAMP UP CONDITIONS; SUBLIMATION EPITAXY; THICK LAYERS;

SILICON CARBIDE;

EID: 38449088131     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.195     Document Type: Conference Paper

References (3)

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2. M. Syväjärvi, R. Yakimova, M. Tuominen, A. Kakanakova-Georgieva, M.F. MacMillan, A. Henry, Q. Wahab, and E. Janzén: J. Crystal Growth Vol.197 (1999), p. 155.
3. T. Kimoto, A. Itoh, H. Matsunami, and T. Okano. J. Appl. Phys. Vol.81 (1997), p. 3494.