Structure evolution of 3C-SiC on cubic and hexagonal substrates

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 283-286

  Yakimova, Rositza ^a   Yazdi, G Reza ^a   Sritirawisarn, Nut ^a   Syväjärvi, Mikael ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

3C SiC; Defects; Growth mechanism; Nucleation; Sublimation growth

Indexed keywords

GROWTH RATE; NUCLEATION; OPTICAL MICROSCOPY; SILICON WAFERS; SUBLIMATION; VACUUM;

BULK CRYSTALS; GROWTH MECHANISM; POLYTYPE OCCURRENCE; STRUCTURE EVOLUTION; SUBLIMATION GROWTH;

SILICON CARBIDE;

EID: 37849012221     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.283     Document Type: Conference Paper

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