Epitaxial growth of 4H-SiC by sublimation close space technique

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 121-124

  Nishino, S ^a   Matsumoto, K ^a   Yoshida, T ^a   Chen, Y ^a   Lilov, S K ^b  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF SOFIA   (Bulgaria)

Author keywords

4H SiC; Close space technique; Epitaxial growth; Sublimation

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; POLYCRYSTALLINE MATERIALS; PRESSURE EFFECTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBLIMATION;

CLOSE SPACE TECHNIQUE (CST); STEP BUNCHING; SUBLIMATION GROWTH;

SEMICONDUCTING FILMS;

EID: 0032644608     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00483-8     Document Type: Article

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