Thermo-mechanical reliability of double-sided IGBT assembly bonded by sintered nanosilver

IEEE Transactions on Device and Materials Reliability

Volumn 14, Issue 1, 2014, Pages 194-202

  Mei, Yun Hui ^a,b   Lian, Jiao Yuan ^b   Chen, Xu ^b   Chen, Gang ^b   Li, Xin ^a,b   Lu, Guo Quan ^c  

^a Tianjin Key Laboratory of Advanced Joining Technology   (United States)

^b TIANJIN UNIVERSITY   (China)

^c Virginia Polytechnic Institute and State University   (United States)

Author keywords

Electronic packaging; insulated gate bipolar transistor (IGBT); reliability; temperature cycling; Thermal stress

Indexed keywords

ELECTRONICS PACKAGING; FINITE ELEMENT METHOD; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); RELIABILITY; THERMAL STRESS;

BONDING STRENGTH; ELECTRONIC PACKAGING; SCANNING ACOUSTIC MICROSCOPY; TEMPERATURE CYCLING; TEMPERATURE CYCLING TESTS; THERMAL PERFORMANCE; THERMOMECHANICAL RELIABILITY; X RAY PHOTOGRAPH;

SINTERING;

EID: 84896475520     PISSN: 15304388     EISSN: 15582574     Source Type: Journal    
DOI: 10.1109/TDMR.2013.2280668     Document Type: Article

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