Effect of oxygen partial pressure on silver migration of low-temperature sintered nanosilver die-attach material

IEEE Transactions on Device and Materials Reliability

Volumn 11, Issue 2, 2011, Pages 312-315

  Mei, Yunhui ^a,b   Lu, Guo Quan ^a   Chen, Xu ^b   Luo, Shufang ^c   Ibitayo, Dimeji ^d  

^a Virginia Polytechnic Institute and State University   (United States)

^b TIANJIN UNIVERSITY   (China)

^c NBE Technologies   (United States)

^d U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

High temperature electronic packaging; lowtemperature joining technique (LTJT); nanosilver die attach; oxygen partial pressure; silver migration

Indexed keywords

HIGH-TEMPERATURE ELECTRONICS; LOW TEMPERATURES; NANO SILVER; OXYGEN PARTIAL PRESSURE; SILVER MIGRATION;

DIES; ELECTRONICS INDUSTRY; ELECTRONICS PACKAGING; JOINING; OXYGEN; POSITIVE IONS; POWER ELECTRONICS; PRESSURE EFFECTS; SILVER; SINTERING;

PARTIAL PRESSURE;

EID: 79959506202     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2010.2056372     Document Type: Article

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