Transient thermal impedance measurements on low-temperature-sintered nanoscale silver joints

Journal of Electronic Materials

Volumn 41, Issue 11, 2012, Pages 3152-3160

  Mei, Yunhui ^a   Wang, Tao ^a   Cao, Xiao ^b   Chen, Gang ^a   Lu, Guo Quan ^a,b   Chen, Xu ^a  

^a TIANJIN UNIVERSITY   (China)

^b Virginia Polytechnic Institute and State University   (United States)

Author keywords

Die attach; Insulated gate bipolar transistor (IGBT); Low temperature sintering; Nanoscale silver; Silver joints; Thermal impedance

Indexed keywords

APPLYING PRESSURE; DIE-ATTACH; DRYING STEP; HOLDING TIME; LOW-TEMPERATURE SINTERING; MEASUREMENT SYSTEM; NANOSCALE SILVER; SINTERED SAMPLES; SINTERING CONDITION; TEMPERATURE PROFILES; THERMAL IMPEDANCE; THERMAL PERFORMANCE;

CRACKS; DRYING; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); SCANNING ELECTRON MICROSCOPY; TEMPERATURE;

SINTERING;

EID: 84868592120     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-012-2233-0     Document Type: Article

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