Double-sided cooling for high power IGBT modules using flip chip technology

IEEE Transactions on Components and Packaging Technologies

Volumn 24, Issue 4, 2001, Pages 698-704

  Gillot, Charlotte ^a   Schaeffer, Christian ^b   Massit, Claude ^a   Meysenc, Luc ^c  

^a CEA LETI   (France)

^b LABORATOIRE D ELECTROTECHNIQUE DE GRENOBLE   (France)

^c ALSTOM   (France)

Author keywords

Heat sink; IGBT; Interconnection; Microchannel; Power module

Indexed keywords

ALUMINUM NITRIDE; ELECTRONICS PACKAGING; FLIP CHIP DEVICES; HEAT RESISTANCE; HEAT SINKS; SEMICONDUCTOR DIODES; SUBSTRATES;

DIRECT BOND COPPER (DBC) SUBSTRATES;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0035694761     PISSN: 15213331     EISSN: None     Source Type: Journal    
DOI: 10.1109/6144.974963     Document Type: Article

References (10)

1. 6,5 kV IGBT-Modules
2. High frequency, low cost, power packaging using thin film power overlay technology
3. An innovative technique for packaging power electronic building blocks using metal posts interconnected parallel plate structures
4. New high reliability bondless pressure contact IGBTs
5. 2.5 kV-100 A flat-packaged IGBT (micro-stack IGBT)
6. Integrated single and two-phase micro heat sinks under IGBT chips
7. High-performance heat sink for VLSI
8. A high heat flux IGBT micro exchanger setup
9. Integrated micro heat sink for power multichip module