Die bonding of high power 808 nm laser diodes with nanosilver paste

Journal of Electronic Packaging

Volumn 134, Issue 4, 2012, Pages

  Yan, Yi ^a   Chen, Xu ^a,b   Liu, Xingsheng ^a   Mei, Yunhui ^a   Lu, Guo Quan ^c  

^a TIANJIN UNIVERSITY   (China)

^b XI AN INSTITUTE OF OPTICS AND PRECISION MECHANICS   (China)

^c Virginia Polytechnic Institute and State University   (United States)

Author keywords

die bonding; laser diodes; nanosilver paste

Indexed keywords

FINITE ELEMENT METHOD; HIGH POWER LASERS; POWER SEMICONDUCTOR DIODES; SEMICONDUCTOR LASERS; THERMOANALYSIS;

CONDUCTION COOLED; CONTINUOUS WAVE MODES; DIE BONDING; FINITE ELEMENT ANALYSE; HIGH POWER; HIGH POWER LASER DIODE; HIGH POWER SEMICONDUCTOR LASER; NANO-SILVER PASTES; NEAR FIELDS; PROPERTY;

DIES;

EID: 84865731349     PISSN: 10437398     EISSN: 15289044     Source Type: Journal    
DOI: 10.1115/1.4007271     Document Type: Article

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