SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 40, Issue 10, 2011, Pages 2119-2125

Investigation of post-etch copper residue on direct bonded copper (DBC) substrates

(6) Mei, Yunhui a Lu, Guo Quan b Chen, Xu a Gang, Chen a Luo, Shufang c Ibitayo, Dimeji d

a TIANJIN UNIVERSITY (China)

b Virginia Polytechnic Institute and State University (United States)

c NBE Technologies LLC (United States)

d U S ARMY RESEARCH LABORATORY (United States)

Author keywords

copper; DBC; migration; nanosilver; post etch residue; reliability

Indexed keywords

DBC; DIRECT BONDED COPPERS; ELECTRICAL ISOLATION; HIGH-POWER; MIGRATION; NANO SILVER; POST-ETCH RESIDUES; POWER ELECTRONIC APPLICATIONS; SEMICONDUCTOR MODULES;

ALUMINA; DENDRITES (METALLOGRAPHY); ELECTRIC FIELDS; POWER ELECTRONICS; RELIABILITY;

COPPER;

EID: 80052968671 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-011-1716-8 Document Type: Article

Times cited : (33)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.