Thermomechanical reliability of low-temperature sintered silver die attached SiC power device assembly

IEEE Transactions on Device and Materials Reliability

Volumn 6, Issue 3, 2006, Pages 436-441

  Bai, John Guofeng ^a,b,c   Lu, Guo Quan ^a,d  

^a IEEE   (United States)

^b State University   (United States)

^c University of Washington   (United States)

^d VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

Power semiconductor devices; Reliability estimation; Reliability testing; Silver

Indexed keywords

POWER SEMICONDUCTOR DEVICES; RELIABILITY ESTIMATION; RELIABILITY TESTING;

DIES; LOW TEMPERATURE EFFECTS; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SILVER; SINTERING;

THERMOMECHANICAL TREATMENT;

EID: 33750841291     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2006.882196     Document Type: Article

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