Tristate operation in resistive switching of SiO2 thin films

IEEE Electron Device Letters

Volumn 33, Issue 12, 2012, Pages 1702-1704

  Chen, Yen Ting ^a   Fowler, Burt ^b   Wang, Yanzhen ^a   Xue, Fei ^a   Zhou, Fei ^a   Chang, Yao Feng ^a   Chen, Pai Yu ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

^b PrivaTran LLC   (United States)

Author keywords

Multilevel programming; resistive switching random access memory (RRAM); SiOx

Indexed keywords

CONDUCTING FILAMENT; DEVICE CURRENTS; MULTILEVEL PROGRAMMING; RANDOM ACCESS MEMORIES; READ DISTURB; RESISTIVE MEMORIES; RESISTIVE SWITCHING; SIOX; THERMAL EXPOSURE; THIN SILICON LAYERS;

ELECTROFORMING; RANDOM ACCESS STORAGE; SILICON;

SILICON OXIDES;

EID: 84870460435     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2218566     Document Type: Article

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