Resistive switching mechanism in silicon highly rich SiOx (x < 0.75) films based on silicon dangling bonds percolation model

Applied Physics Letters

Volumn 102, Issue 4, 2013, Pages

  Wang, Yuefei ^a   Qian, Xinye ^a   Chen, Kunji ^a   Fang, Zhonghui ^a   Li, Wei ^a   Xu, Jun ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EXPERIMENTAL EVIDENCE; HIGH CONCENTRATION; LOWER VOLTAGES; PERCOLATION MODELS; RESET VOLTAGE; RESISTIVE SWITCHES; RESISTIVE SWITCHING MECHANISMS; SET VOLTAGE; SILICON DANGLING BOND; VACUUM ENVIRONMENT;

DANGLING BONDS; PERCOLATION (SOLID STATE); SILICON OXIDES;

SILICON;

EID: 84873575352     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4776695     Document Type: Article

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