Large-area Bernal-stacked bi-, tri-, and tetralayer graphene

ACS Nano

Volumn 6, Issue 11, 2012, Pages 9790-9796

  Sun, Zhengzong ^a   Raji, Abdul Rahman O ^a   Zhu, Yu ^a   Xiang, Changsheng ^a   Yan, Zheng ^a   Kittrell, Carter ^b   Samuel, E L G ^a   Tour, James M ^a,b,c  

^a RICE UNIVERSITY   (United States)

^b RICE UNIVERSITY   (United States)

^c Rice University   (United States)

Author keywords

Bernal; bilayer; chemical vapor deposition; copper; few layer; graphene; graphene mechanism

Indexed keywords

BERNAL; BI-LAYER; CU SURFACES; ELECTRONIC APPLICATION; FEW-LAYER; FEW-LAYER GRAPHENE; GAS RATIO; GROWTH MECHANISMS; LAYER-BY-LAYER GROWTH; SELECTIVE GROWTH; SELF-LIMITING PROCESS; STACKING ORDER; SYNTHETIC METHODS; TOTAL PRESSURE;

CHEMICAL VAPOR DEPOSITION; COPPER; ELECTRONIC STRUCTURE; FILMS;

GRAPHENE;

COPPER; GRAPHITE; NANOMATERIAL;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

COPPER; CRYSTALLIZATION; GRAPHITE; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTIES;

EID: 84870431093     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn303328e     Document Type: Article

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