Comprehensive studies on the stabilities of a-In-Ga-Zn-O based thin film transistor by constant current stress

Thin Solid Films

Volumn 518, Issue 11, 2010, Pages 3012-3016

  Nomura, Kenji ^a   Kamiya, Toshio ^a,b   Kikuchi, Yutomo ^b   Hirano, Masahiro ^a   Hosono, Hideo ^a,b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b NONE   (Japan)

Author keywords

a In Ga Zn O; Amorphous oxide semiconductor; Constant current stress; Thin film transistor; Wet thermal annealing

Indexed keywords

AMORPHOUS OXIDE SEMICONDUCTOR; AMORPHOUS OXIDE SEMICONDUCTORS; COMPREHENSIVE STUDIES; CONSTANT CURRENT STRESS; HYSTERESIS CHARACTERISTICS; LARGE HYSTERESIS; OXIDATION POWER; STRESS TEMPERATURE; STRESS TEST; SUBTHRESHOLD; THERMAL-ANNEALING; THRESHOLD VOLTAGE SHIFTS; TRANSFER CURVES; TRAP STATE; VOLTAGE SWINGS; WATER MOLECULE;

AMORPHOUS FILMS; ANNEALING; BOND STRENGTH (CHEMICAL); HYSTERESIS; LITHIUM BATTERIES; OXYGEN; OXYGEN VACANCIES; STABILITY; THIN FILMS; THRESHOLD VOLTAGE; ZINC;

THIN FILM TRANSISTORS;

EID: 77649317049     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.193     Document Type: Article

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