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Applied Physics Letters

Volumn 97, Issue 10, 2010, Pages

Amorphous silicon-indium-zinc oxide semiconductor thin film transistors processed below 150°C

(3) Chong, Eugene a,b Chun, Yoon Soo a Lee, Sang Yeol a,b

a Korea Institute of Science and Technology (South Korea)

b University of Science and Technology (UST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS TEMPERATURE STRESS; FIELD-EFFECT MOBILITIES; INDIUM ZINC OXIDES; ON/OFF RATIO; PROCESS TEMPERATURE;

AMORPHOUS FILMS; AMORPHOUS SILICON; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 77956586457 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3479925 Document Type: Article

Times cited : (95)

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