Investigation of solution-processed amorphous SrInZnO thin film transistors

Journal of Crystal Growth

Volumn 326, Issue 1, 2011, Pages 171-174

  Yoon, Doo Hyun ^a   Kim, Si Joon ^a   Jeong, Woong Hee ^a   Kim, Dong Lim ^a   Rim, You Seung ^a   Kim, Hyun Jae ^a  

^a Yonsei University   (South Korea)

Author keywords

A1. Band gap; B1. Oxides; B1. Zinc compound; B2. Semiconducting indium compound

Indexed keywords

A1. BAND GAP; ANNEALING TEMPERATURES; B1. OXIDES; B1. ZINC COMPOUND; B2. SEMICONDUCTING INDIUM COMPOUND; CARRIER GENERATION; HALL MEASUREMENTS; ON/OFF RATIO; OPTIMIZED CONDITIONS; SATURATION MOBILITY; SOLUTION PROCESS; SOLUTION-PROCESSED; SUBTHRESHOLD SWING; TRANSMITTANCE MEASUREMENTS;

AMORPHOUS FILMS; DIFFERENTIAL THERMAL ANALYSIS; INDIUM COMPOUNDS; SEMICONDUCTING INDIUM; THERMOGRAVIMETRIC ANALYSIS; THIN FILM DEVICES; THIN FILMS; TRANSISTORS; TRANSITION METAL COMPOUNDS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

THIN FILM TRANSISTORS;

EID: 79960185464     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.01.090     Document Type: Conference Paper

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