Effect of Zr addition on sol-gel processed InZrZnO thin-film transistor

Molecular Crystals and Liquid Crystals

Volumn 564, Issue 1, 2012, Pages 130-137

  Kim, Dae Hwan ^a   Son, Dae Ho ^a   Sung, Shi Joon ^a   Kim, Jung Hye ^a   Kang, Jin Kyu ^a  

^a Daegu Gyeongbuk Institute of Science and Technology   (South Korea)

Author keywords

AMOLED; inzrzno; Metal oxide; sol gel; solution process; thin film transistor

Indexed keywords

AM-OLED; BIAS STABILITY; CHANNEL LAYERS; DOPING CONCENTRATION; ELECTRICAL CHARACTERISTIC; FIELD-EFFECT MOBILITIES; INZRZNO; METAL OXIDES; OFF CURRENT; ON/OFF RATIO; PERFORMANCE PROPERTIES; SOLUTION PROCESS; SOLUTION-PROCESSED; SUBTHRESHOLD SWING; THIN-FILM TRANSISTOR (TFTS); ZR ADDITION;

ELECTRIC FIELD EFFECTS; METALLIC COMPOUNDS; SEMICONDUCTING ORGANIC COMPOUNDS; SOL-GEL PROCESS; SOL-GELS; ZIRCONIUM;

THIN FILM TRANSISTORS;

EID: 84865521850     PISSN: 15421406     EISSN: 15635287     Source Type: Journal    
DOI: 10.1080/15421406.2012.691705     Document Type: Article

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