Properties of low indium content Al incorporated IZO (indium zinc oxide) deposited at room temperature

Journal of Applied Physics

Volumn 112, Issue 8, 2012, Pages

  Sun, Jian ^a   Yang, Weifeng ^a   Huang, Yanhua ^a   Soon Lai, Weng ^a   Lee, Alex Y S ^b   Fu Wang, Chiou ^b   Gong, Hao ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b Du Pont Apollo Limited   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AL DOPED; AL-DOPING; HIGH ELECTRICAL CONDUCTIVITY; INDIUM CONTENT; INDIUM ZINC OXIDES; INSULATOR METAL TRANSITION; ROOM TEMPERATURE;

ELECTRIC CONDUCTIVITY; INDIUM; SEMICONDUCTOR DOPING;

ALUMINUM;

EID: 84868369776     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4758383     Document Type: Article

References (26)

1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature 432, 488 (2004). 10.1038/nature03090
2. W. H. Jeong, G. H. Kim, H. S. Shin, B. D. Ahn, H. J. Kim, M. K. Ryu, K. B. Park, J. B. Seon, and S. Y. Lee, Appl. Phys. Lett. 96, 093503 (2010). 10.1063/1.3340943
3. L. Wang, M. H. Yoon, G. Lu, Y. Yang, A. Facchetti, and T. J. Marks, Nature Mater. 5, 893 (2006). 10.1038/nmat1755
4. H. Hosono, K. Nomura, Y. Ogo, T. Urug, and T. Kamiy, J. Non-Cryst. Solids 354, 2796 (2008). 10.1016/j.jnoncrysol.2007.10.071
5. J. H. Bae, J. M. Moon, J. W. Kang, H. D. Park, J. J. Kim, W. J. Cho, and H. K. Kim, J. Electrochem. Soc. 154, J81 (2007). 10.1149/1.2426800
6. M. P. Taylor, D. W. Readey, M. V. Hest, C. W. Teplin, J. L. Alleman, M. S. Dabney, L. M. Gedvilas, B. M. Keyes, B. To, J. D. Perkins, and D. S. Ginley, Adv. Funct. Mater. 18, 3169 (2008). 10.1002/adfm.200700604
7. J. W. Kang, W. I. Jeong, J. J. Kim, H. K. Kim, D. G. Kim, and G. H. Lee, Electrochem. Solid-State Lett. 10, J75 (2007). 10.1149/1.2720635
8. A. J. Leenheer, J. D. Perkins, M. F. A. M. van Hest, J. J. Berry, R. P. OHayre, and D. S. Ginley, Phys. Rev. B 77, 115215 (2008). 10.1103/PhysRevB.77. 115215
9. N. Ito, Y. Sato, P. K. Song, A. Kaijio, K. Inoue, and Y. Shigesato, Thin Solid Films 496, 99 (2006). 10.1016/j.tsf.2005.08.257
10. B. Kumar, H. Gong, and R. Akkipeddi, J. Appl. Phys. 98, 073703 (2005). 10.1063/1.2060957
11. Z. Y. Hu, B. C. Jiao, J. J. Zhang, X. D. Zhang, and Y. Zhao, Int. J. Photoenergy 2011, 158065 (2011). 10.1155/2011/158065
12. J. Sun, W. S. Lai, and H. Gong, J. Appl. Phys. 111, 083712 (2012). 10.1063/1.4704686
13. J. Sun, Y. H. Huang, and H. Gong, J. Appl. Phys. 110, 023709 (2010). 10.1063/1.3605547
14. I. Kosacki, V. Petrovsky, and H. U. Anderson, Appl. Phys. Lett. 74, 341 (1999). 10.1063/1.123065
15. J. Sun and H. Gong, Appl. Phys. Lett. 97, 092106 (2010). 10.1063/1.3485670
16. A. P. Roth, J. B. Webb, and D. G. Williams, Phys. Rev. B 25, 7836 (1982). 10.1103/PhysRevB.25.7836
17. G. Sanon, R. Rup, and A. Mansingh, Phys. Rev. B 44, 5672 (1991). 10.1103/PhysRevB.44.5672
18. K. F. Berggren and B. E. Sernelius, Phys. Rev. B 24, 1971 (1981). 10.1103/PhysRevB.24.1971
19. M. Prutton, Introduction to Surface Physics (Oxford University Press, New York, 1994).
20. A. Takagia, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, Thin Solid Films 486, 38 (2005). 10.1016/j.tsf.2004.11.223
21. K. Makise, M. Funaki, B. Shinozaki, K. Yano, Y. Shimane, K. Inoue, and H. Nakamura, Thin solid films 516, 5805 (2008). 10.1016/j.tsf.2007.10.037
22. B. Shinozaki, K. makise, Y. Shimane, H. Nakamura, and K. Inoue, J. Phys. Soc. Jpn. 76, 074718 (2007). 10.1143/JPSJ.76.074718
23. P. A. Lee and T. V. Ramakrishnan, Rev. Mod. Phys. 57, 287 (1985). 10.1103/RevModPhys.57.287
24. M. Nistor, F. Gherendi, N. B. Mandache, C. Hebert, J. Perrière, and W. Seiler, J. Appl. Phys. 106, 103710 (2009). 10.1063/1.3259412
25. G. Herranz, F. Sánchez, B. Martínez, J. Fontcuberta, M. V. García-Cuenca, C. Ferrater, M. Varela, and P. Levy, Eur. Phys. J. B 40, 439 (2004). 10.1140/epjb/e2004-00207-9
26. L. Nagarajan, R. De souza, D. Samuelis, I. Valov, A. Borger, J. Janek, K. Becker, P. Schmidt, and M. Martin, Nature Mater. 7, 391 (2008). 10.1038/nmat2164