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Applied Physics Letters

Volumn 98, Issue 26, 2011, Pages

On the effect of Ti on the stability of amorphous indium zinc oxide used in thin film transistor applications

(2) Lee, Sunghwan a Paine, David C a

a Brown University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION LAYER; AMORPHOUS OXIDES; AMORPHOUS STRUCTURES; BIXBYITE; CHANNEL MATERIALS; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; GLANCING INCIDENT ANGLE; INDIUM ZINC OXIDES; RUTILE PHASE; SELECTED AREA DIFFRACTION; THERMO DYNAMIC ANALYSIS; TIO;

AMORPHOUS FILMS; CRYSTALLIZATION; ELECTRONIC PROPERTIES; INDIUM; OXIDE MINERALS; THERMOANALYSIS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TITANIUM DIOXIDE; TRANSMISSION ELECTRON MICROSCOPY; ZINC; ZINC OXIDE;

AMORPHOUS MATERIALS;

EID: 79960103931 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3605589 Document Type: Article

Times cited : (24)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.