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Volumn 326, Issue 1, 2011, Pages 163-165
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The formation of InZnO lattices incorporating Ba for thin-film transistors using a solution process
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Author keywords
A1. Interfaces; A1. Solidification; A1. X ray diffraction; B1. Oxides; B2. Semiconducting indium compounds
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Indexed keywords
A1. INTERFACES;
A1. SOLIDIFICATION;
ATOMIC PERCENTAGE;
B1. OXIDES;
B2. SEMICONDUCTING INDIUM COMPOUNDS;
ELECTRICAL CHARACTERISTIC;
HYSTERESIS BEHAVIOR;
OFF-CURRENT;
SOLUTION PROCESS;
SOLUTION-PROCESSED;
SUBTHRESHOLD SWING;
DIFFERENTIAL THERMAL ANALYSIS;
DIFFRACTION;
INDIUM COMPOUNDS;
SEMICONDUCTING INDIUM;
SEMICONDUCTING INDIUM COMPOUNDS;
THERMOGRAVIMETRIC ANALYSIS;
THIN FILM TRANSISTORS;
X RAY DIFFRACTION;
X RAY DIFFRACTION ANALYSIS;
BARIUM;
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EID: 79960200303
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2011.01.088 Document Type: Conference Paper |
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Times cited : (24)
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References (10)
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