The effect of la in InZnO systems for solution-processed amorphous oxide thin-film transistors

Applied Physics Letters

Volumn 97, Issue 19, 2010, Pages

  Kim, Doo Na ^a   Kim, Dong Lim ^a   Kim, Gun Hee ^a   Kim, Si Joon ^a   Rim, You Seung ^a   Jeong, Woong Hee ^a   Kim, Hyun Jae ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CHANNEL LAYERS; AMORPHOUS OXIDES; BAND GAPS; CHANNEL MOBILITY; METAL-OXYGEN BONDS; MOLE RATIO; OFF-CURRENT; ON/OFF RATIO; SOLUTION-PROCESSED; SUBTHRESHOLD SWING;

AMORPHOUS FILMS; OXYGEN;

THIN FILM TRANSISTORS;

EID: 78249266622     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3506503     Document Type: Article

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