Progress in Silicon Carbide Power Devices

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2006, Pages 155-158

  Agarwal, Anant ^a   Das, Mrinal ^a   Hull, Brett ^a   Krishnaswami, Sumi ^a   Palmour, John ^a   Richmond, James ^a   Ryu, Sei Hyung ^a   Zhang, Jon ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

III-V SEMICONDUCTORS; PIN DIODES; POWER MOSFET; POWER SEMICONDUCTOR DIODES;

BARRIER DIODES; COMMERCIALISATION; DEVICE TECHNOLOGIES; MATERIALS TECHNOLOGY; MOSFETS; POWER FACTOR CORRECTIONS; SCHOTTKY BARRIERS; SIC DEVICES; SIC MATERIALS; SILICON-CARBIDE POWER DEVICES;

SCHOTTKY BARRIER DIODES;

EID: 85014156721     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. M.K. Das, Recent Advances in (0001) 4H-SiC MOS Device Technology, Materials Science Forum, Vol. 457-460 (2003), pp. 1275-1280.
2. H.O. Olafsson, Ph.D. Dissertation, Chalmers University (2004).
3. D. Alok, et al., US Patent and Trademark Office 6,559,068 (2003).
4. M. Das et. al, Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300°C NO Anneal, presented at ICSCRM 2005.
5. A. Agarwal et. al, Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs, presented at ICSCRM, Pittsburgh, USA, Sept. 2005.
6. P. Ma et. al, InGaP/GaAs HBT Failure Mechanism Investigation and Reliability Enhancement, Report for MICRO Project 98-018, 1999.
7. J-M. Lee et. al, Fabrication and Temperature-dependent characteristics of AIGaAs/GaAs Heterojunction Bipolar Transistors with an AIGaAs-Ledge Structure, J. Korean Physical Society, 40, pp. 320-324, 2002.