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Volumn 55, Issue 8, 2008, Pages 2029-2040

A physical model of high temperature 4H-SiC MOSFETs

Author keywords

High temperature mobility; High temperature operation; Interface traps; Silicon carbide (SiC) MOSFET; Surface roughness; Velocity saturation

Indexed keywords

CORRELATION METHODS; ELECTRIC CURRENTS; FRICTION; METAL ANALYSIS; MODELS; MOSFET DEVICES; NONMETALS; SCATTERING; SILICON; SILICON CARBIDE; SURFACE PROPERTIES; SURFACE ROUGHNESS;

EID: 49249116197     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.926665     Document Type: Article
Times cited : (165)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.