Characterization, modeling, and application of 10-kV SiC MOSFET

IEEE Transactions on Electron Devices

Volumn 55, Issue 8, 2008, Pages 1798-1806

  Wang, Jun ^a   Zhao, Tiefu ^a   Li, Jun ^a   Huang, Alex Q ^a   Callanan, Robert ^b   Husna, Fatima ^b   Agarwal, Anant ^b  

^a North Carolina State University   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

Converter; High frequency; Loss; Model; MOSFET; Silicon carbide (SiC)

Indexed keywords

ELECTRIC CONVERTERS; MOSFET DEVICES; NONMETALS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPICE;

AP PLICATION PROSPECT; BOOST CONVERTERS; CONVERTER; DMOSFET; HIGH FREQUENCY; HIGH VOLTAGES; HIGH-FREQUENCY POWER; LOSS; MODEL; MOSFET; MOSFETS; OPERATION CONDITIONS; SIC MOSFET; SILICON CARBIDE (SIC); SILICON CARBIDE DEVICES; SPICE MODELING; STEADY STATES; TOTAL POWER LOSS; UNITED STATES;

SILICON CARBIDE;

EID: 49249121553     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.926650     Document Type: Article

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