The impact of parasitic inductance on the performance of silicon-carbide schottky barrier diodes

IEEE Transactions on Power Electronics

Volumn 27, Issue 8, 2012, Pages 3826-3833

  Alatise, Olayiwola ^a   Parker Allotey, Nii Adotei ^a   Hamilton, Dean ^a   Mawby, Phil ^a  

^a UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

Free wheeling diodes; oscillations; RLC; silicon carbide (silicon)

Indexed keywords

ANALYTICAL EXPRESSIONS; CLAMPED INDUCTIVE SWITCHING; DAMPING FACTORS; DIODE RESISTANCE; EXPERIMENTAL MEASUREMENTS; HIGH POWER LEVEL; HIGH TEMPERATURE; ON-STATE RESISTANCE; OSCILLATION FREQUENCY; OSCILLATIONS; PARASITIC INDUCTANCES; PIN DIODE; POWER-LOSSES; RLC; RLC CIRCUIT; SERIES RESISTANCES; SI DEVICES; SPICE SIMULATIONS; SWITCHING ENERGY; TEMPERATURE RANGE;

CAPACITANCE; DAMPING; DIODES; ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; INDUCTANCE; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SILICON CARBIDE; SPICE;

SILICON;

EID: 84860284218     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2012.2183390     Document Type: Article

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