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Volumn , Issue , 2007, Pages 1240-1246

Long-term stability test system for high-voltage, high-frequency SiC power devices

Author keywords

[No Author keywords available]

Indexed keywords

(100) SILICON; APPLIED (CO); BOOST CONVERTERS; BURST SWITCHING; DC CONVERTERS; DESIGN CRITERION; HIGH VOLTAGE DEVICES; HIGH-FREQUENCY (HF); HIGH-VOLTAGE (HV); LONG TERM STABILITY; MOSFETS; POWER DEVICES; POWER DIODES; POWER MOSFETS; POWER SWITCHING; SIC DIODES; SILICON CARBIDE (SIC); SILICON DIODES; SWITCHING CONDITIONS; SWITCHING POWER CONVERTERS; SYSTEM OPERATIONS; TEST SYSTEMS;

EID: 46449085481     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEX.2007.357673     Document Type: Conference Paper
Times cited : (8)

References (11)
  • 1
    • 34848913574 scopus 로고    scopus 로고
    • Status of High-Voltage, High-Frequency Silicon-Carbide Power Devices
    • San Diego, CA, March
    • A. Hefner, "Status of High-Voltage, High-Frequency Silicon-Carbide Power Devices," in 31" GOMACTech Conf., pp. 232-235. San Diego, CA, March 2006.
    • (2006) 31 GOMACTech Conf , pp. 232-235
    • Hefner, A.1
  • 2
    • 46449092688 scopus 로고    scopus 로고
    • Emerging Silicon-Carbide Power Devices Enable Revolutionary Changes in High Voltage Power Conversion
    • Fourth Quarter
    • A. Hefner, R. Singh, and J.S. Lai, "Emerging Silicon-Carbide Power Devices Enable Revolutionary Changes in High Voltage Power Conversion," IEEE Power Electronics Society NEWSLETTER, Fourth Quarter 2004, pp. 10-12.
    • (2004) IEEE Power Electronics Society NEWSLETTER , pp. 10-12
    • Hefner, A.1    Singh, R.2    Lai, J.S.3
  • 4
    • 34848825141 scopus 로고    scopus 로고
    • Development of SiC High Power Electronics for Naval Aircraft Carriers
    • Las Vegas, NV, April
    • th GOMACTech Conf., pp. 218-221, Las Vegas, NV, April 2005.
    • (2005) th GOMACTech Conf , pp. 218-221
    • Beerman-Curtin, S.1
  • 7
    • 34848896110 scopus 로고    scopus 로고
    • Wide Bandgap Semiconductor Technology High Power Electronics Program WBG-HPE
    • Defense Advanced Research Projects Agency (DARPA), Microelectronic Technology Office (MTO), Wide Bandgap Semiconductor Technology High Power Electronics Program (WBG-HPE): http://www.darpa.mil/mto/solicitations/ BAA # 06-30.
    • Microelectronic Technology Office (MTO)
  • 10
    • 46449122409 scopus 로고    scopus 로고
    • SN74LS221 chip datasheet, On Semiconductors website
    • SN74LS221 chip datasheet, On Semiconductors website, www.onsemi.com.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.