Modeling, simulation, and validation of a power SiC BJT

IEEE Transactions on Power Electronics

Volumn 27, Issue 10, 2012, Pages 4338-4346

  Gachovska, Tanya ^a   Hudgins, Jerry L ^a   Bryant, Angus ^b   Santi, Enrico ^c   Mantooth, H Alan ^d   Agarwal, Anant K ^e  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^b GENERAL ELECTRIC COMPANY   (United States)

^c The Department of Mechanical Engineering   (United States)

^d University of Arkansas   (United States)

^e Arkansas Power Electronics International Inc   (United States)

Author keywords

power semiconductor modeling; Silicon carbide (SiC) bipolar junction transistor (BJT)

Indexed keywords

AMBIPOLAR DIFFUSION EQUATION; EXPERIMENTAL TESTING; MATLAB AND SIMULINK; PHYSICS-BASED MODELS; POWER SEMICONDUCTORS; SIC BJT; SWITCHING WAVEFORMS;

FOURIER SERIES; MATLAB; PARTIAL DIFFERENTIAL EQUATIONS; POWER ELECTRONICS; SILICON CARBIDE;

BIPOLAR TRANSISTORS;

EID: 84862004185     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2012.2190622     Document Type: Article

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