An analytical model of the forward I- v characteristics of 4H-SiC p-i-n diodes valid for a wide range of temperature and current

IEEE Transactions on Power Electronics

Volumn 26, Issue 10, 2011, Pages 2835-2843

  Bellone, Salvatore ^a   Corte, Francesco G Della ^b   Albanese, Loredana Freda ^a   Pezzimenti, Fortunato ^b  

^a UNIVERSITY OF SALERNO   (Italy)

^b UNIVERSITY MEDITERRANEA OF REGGIO CALABRIA   (Italy)

Author keywords

Diode models; high temperature electronics; power diodes; SiC p i n diodes

Indexed keywords

ANALYTICAL MODEL; BAND GAP NARROWING; CURRENT LEVELS; DOPING DEPENDENCE; EXPERIMENTAL DATA; HIGH-TEMPERATURE ELECTRONICS; IV CHARACTERISTICS; MATERIAL PROPERTY; PHYSICAL PARAMETERS; PIN DIODE; POWER DIODE; SPACE CHARGE LAYERS; STEADY-STATE BEHAVIORS; TECHNOLOGICAL PARAMETERS;

CARRIER LIFETIME; CARRIER MOBILITY; COMPUTER SIMULATION; DIODES; MATHEMATICAL MODELS; MODELS; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80053614228     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2011.2129533     Document Type: Article

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