High-temperature silicon-on-insulator gate driver for siC-FET power modules

IEEE Transactions on Power Electronics

Volumn 27, Issue 11, 2012, Pages 4417-4424

  Valle Mayorga, Javier ^a   Gutshall, Caleb P ^b   Phan, Khoa M ^c   Escorcia Carranza, Ivonne ^d   Mantooth, H Alan ^a   Reese, Bradley ^e   Schupbach, Marcelo ^e   Lostetter, Alex ^e  

^a University of Arkansas   (United States)

^b Garver Engineers   (United States)

^c Hammett and Edison   (United States)

^d UNIVERSITY OF GLASGOW   (United Kingdom)

^e Arkansas Power Electronics International Inc   (United States)

Author keywords

Gate driver; high temperature electronics; silicon carbide (SiC); silicon on insulator (SOI)

Indexed keywords

CMOS PROCESSS; ELECTRICAL ISOLATION; EXTREME CONDITIONS; FULL-BRIDGE; GATE DRIVERS; HEAT SINKING; HIGH TEMPERATURE; HIGH-POWER-DENSITY; HIGH-TEMPERATURE ELECTRONICS; HIGH-VOLTAGES; LOW-VOLTAGE; NOISE IMMUNITY; PARTIALLY DEPLETED; POWER DENSITIES; POWER DEVICES; POWER MODULE; POWER SEMICONDUCTORS; SECONDARY-SIDE; SI-BASED; SIC DEVICES; SILICON ON INSULATOR; SILICON-ON-INSULATORS; TEMPERATURE CAPABILITY; VOLTAGE BLOCKING;

CAPACITANCE; CMOS INTEGRATED CIRCUITS; POWER ELECTRONICS;

SILICON CARBIDE;

EID: 84862977057     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2011.2182213     Document Type: Article

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