Current conduction and resistive switching characteristics of Sm 2O3 and Lu2O3 thin films for low-power flexible memory applications

Journal of Applied Physics

Volumn 115, Issue 1, 2014, Pages

  Mondal, Somnath ^a   Chueh, Ching Hao ^a   Pan, Tung Ming ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MODELING; CURRENT CONDUCTION MECHANISMS; RADIO-FREQUENCY-MAGNETRON SPUTTERING; RESISTIVE RANDOM ACCESS MEMORY (RERAM); SCHOTTKY EMISSION MODEL; SPACE-CHARGE-LIMITED; STRUCTURAL MORPHOLOGY; SWITCHING PARAMETERS;

ACTIVATION ENERGY; ARRHENIUS PLOTS; SWITCHING SYSTEMS;

THIN FILMS;

EID: 84892164118     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4858417     Document Type: Conference Paper

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