Highly reproducible memory effect of organic multilevel resistive-switch device utilizing graphene oxide sheets/polyimide hybrid nanocomposite

Applied Physics Letters

Volumn 99, Issue 4, 2011, Pages

  Wu, Chaoxing ^a   Li, Fushan ^a   Zhang, Yongai ^a   Guo, Tailiang ^a   Chen, Ting ^b  

^a FUZHOU UNIVERSITY   (China)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE CHARACTERISTIC; CURRENT VOLTAGE CURVE; ELECTRICAL SWITCHING; FUNCTIONALIZATIONS; HIGH REPRODUCIBILITY; HIGH-DENSITY; HYBRID NANOCOMPOSITES; LAYER-BY-LAYER FABRICATION; MEMORY EFFECTS; MEMORY PROPERTIES; NONVOLATILE FLASH MEMORIES; RESET VOLTAGE;

FLASH MEMORY; GRAPHENE; LEAD OXIDE; NANOCOMPOSITES; POLYIMIDES;

EQUIPMENT;

EID: 79961057442     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3619815     Document Type: Article

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