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Applied Physics Letters

Volumn 101, Issue 8, 2012, Pages

Effect of Ti doping concentration on resistive switching behaviors of Yb 2O 3 memory cell

(5) Mondal, Somnath a Chen, Hung Yu a Her, Jim Long a Ko, Fu Hsiang b Pan, Tung Ming a

a CHANG GUNG UNIVERSITY (Taiwan)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL COMPOSITIONS; CONDUCTING FILAMENT; DOPING CONCENTRATION; ELECTRICAL PERFORMANCE; ELECTRONIC DEFECTS; JOULE HEATING EFFECT; MEMORY CELL; RESISTIVE MEMORIES; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; RETENTION CHARACTERISTICS; SWITCHING MECHANISM; TI ATOMS; TI DOPING;

INTERFACES (MATERIALS); OXIDE FILMS; SEMICONDUCTOR DOPING; SWITCHING SYSTEMS; THIN FILMS;

YTTERBIUM;

EID: 84865485859 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4747695 Document Type: Article

Times cited : (31)

References (24)

1
- 23944447615
- 2 thin films grown by atomic-layer deposition
- DOI 10.1063/1.2001146, 033715
- B. J. Choi, D. S. Jeong, S. K. Kim, C. Rohde, S. Choi, J. H. Oh, H. J. Kim, C. S. Hwang, K. Szot, R. Waser, B. Reichenberg, and S. Tiedke, J. Appl. Phys. 98, 033715 (2005). 10.1063/1.2001146 (Pubitemid 41204789)
- (2005) Journal of Applied Physics , vol.98 , Issue.3 , pp. 1-10
- Choi, B.J.¹ Jeong, D.S.² Kim, S.K.³ Rohde, C.⁴ Choi, S.⁵ Oh, J.H.⁶ Kim, H.J.⁷ Hwang, C.S.⁸ Szot, K.⁹ Waser, R.¹⁰ Reichenberg, B.¹¹ Tiedke, S.¹²

2
- 36849125984
- 10.1063/1.1702530
- T. W. Hickmott, J. Appl. Phys. 33, 2669 (1962). 10.1063/1.1702530
- (1962) J. Appl. Phys. , vol.33 , pp. 2669
- Hickmott, T.W.¹

3
- 0037127851
- 10.1103/PhysRevLett.88.075508
- K. Szot, W. Speier, R. Carius, U. Zastrow, and W. Beyer, Phys. Rev. Lett. 88, 75508 (2002). 10.1103/PhysRevLett.88.075508
- (2002) Phys. Rev. Lett. , vol.88 , pp. 75508
- Szot, K.¹ Speier, W.² Carius, R.³ Zastrow, U.⁴ Beyer, W.⁵

4
- 3242892591
- 10.1063/1.1768305
- S. Tsui, A. Baikalov, J. Cmaidalka, Y. Y. Sun, Y. Q. Wang, Y. Y. Xue, C. W. Chu, L. Chen, and A. J. Jacobson, Appl. Phys. Lett. 85, 317 (2004). 10.1063/1.1768305
- (2004) Appl. Phys. Lett. , vol.85 , pp. 317
- Tsui, S.¹ Baikalov, A.² Cmaidalka, J.³ Sun, Y.Y.⁴ Wang, Y.Q.⁵ Xue, Y.Y.⁶ Chu, C.W.⁷ Chen, L.⁸ Jacobson, A.J.⁹

5
- 19944434155
- Reproducible resistance switching in polycrystalline NiO films
- DOI 10.1063/1.1831560
- S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D.-S. Suh, Y. S. Joung, I. K. Yoo, I. R. Hwang, S. H. Kim, I. S. Byun, J.-S. Kim, J. S. Choi, and B. H. Park, Appl. Phys. Lett. 85, 5655 (2004). 10.1063/1.1831560 (Pubitemid 40162553)
- (2004) Applied Physics Letters , vol.85 , Issue.23 , pp. 5655-5657
- Seo, S.¹ Lee, M.J.² Seo, D.H.³ Jeoung, E.J.⁴ Suh, D.-S.⁵ Joung, Y.S.⁶ Yoo, I.K.⁷ Hwang, I.R.⁸ Kim, S.H.⁹ Byun, I.S.¹⁰ Kim, J.-S.¹¹ Choi, J.S.¹² Park, B.H.¹³

6
- 63649159091
- 10.1088/0022-3727/42/5/055112
- S. Zhang, S. Long, W. Guan, Q. Liu, Q. Wang, and M. Liu, J. Phys. D: Appl. Phys. 42, 055112 (2009). 10.1088/0022-3727/42/5/055112
- (2009) J. Phys. D: Appl. Phys. , vol.42 , pp. 055112
- Zhang, S.¹ Long, S.² Guan, W.³ Liu, Q.⁴ Wang, Q.⁵ Liu, M.⁶

7
- 0001331485
- 10.1063/1.126902
- A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel, and D. Widmer, Appl. Phys. Lett. 77, 139 (2000). 10.1063/1.126902
- (2000) Appl. Phys. Lett. , vol.77 , pp. 139
- Beck, A.¹ Bednorz, J.G.² Gerber, Ch.³ Rossel, C.⁴ Widmer, D.⁵

8
- 36048964246
- Anode-interface localized filamentary mechanism in resistive switching of Ti O2 thin films
- DOI 10.1063/1.2749846
- K. M. Kim, B. J. Choi, Y. C. Shin, S. Choi, and C. S. Huang, Appl. Phys. Lett. 91, 012907 (2007). 10.1063/1.2749846 (Pubitemid 350092117)
- (2007) Applied Physics Letters , vol.91 , Issue.1 , pp. 012907
- Kim, K.M.¹ Choi, B.J.² Shin, Y.C.³ Choi, S.⁴ Hwang, C.S.⁵

9
- 79551646052
- 10.1063/1.3543837
- H. Zhang, L. Liu, B. Gao, Y. Qiu, X. Liu, J. Lu, R. Han, J. Kang, and B. Yu, Appl. Phys. Lett. 98, 042105 (2011). 10.1063/1.3543837
- (2011) Appl. Phys. Lett. , vol.98 , pp. 042105
- Zhang, H.¹ Liu, L.² Gao, B.³ Qiu, Y.⁴ Liu, X.⁵ Lu, J.⁶ Han, R.⁷ Kang, J.⁸ Yu, B.⁹

10
- 78649447784
- 10.1109/LED.2010.2074177
- Y. Wu, B. Lee, and H.-S. P. Wong, IEEE Electron Device Lett. 31, 1449 (2010). 10.1109/LED.2010.2074177
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 1449
- Wu, Y.¹ Lee, B.² Wong, H.-S.P.³

11
- 38049094920
- 10.1063/1.2832660
- Q. Liu, W. Guan, S. Long, R. Jia, and M. Liu, Appl. Phys. Lett. 92, 012117 (2008). 10.1063/1.2832660
- (2008) Appl. Phys. Lett. , vol.92 , pp. 012117
- Liu, Q.¹ Guan, W.² Long, S.³ Jia, R.⁴ Liu, M.⁵

12
- 80053494334
- 10.1063/1.3645004
- H.-C. Tseng, T.-C. Chang, J.-J. Huang, P.-C. Yang, Y.-T. Chen, F.-Y. Jian, S. M. Sze, and M.-J. Tsai, Appl. Phys. Lett. 99, 132104 (2011). 10.1063/1.3645004
- (2011) Appl. Phys. Lett. , vol.99 , pp. 132104
- Tseng, H.-C.¹ Chang, T.-C.² Huang, J.-J.³ Yang, P.-C.⁴ Chen, Y.-T.⁵ Jian, F.-Y.⁶ Sze, S.M.⁷ Tsai, M.-J.⁸

13
- 77949694257
- 10.1063/1.3355546
- O. Heinonen, M. Siegert, A. Roelofs, A. K. Petford-Long, M. Holt, K. d'Aquila, and W. Li, Appl. Phys. Lett. 96, 103103 (2010). 10.1063/1.3355546
- (2010) Appl. Phys. Lett. , vol.96 , pp. 103103
- Heinonen, O.¹ Siegert, M.² Roelofs, A.³ Petford-Long, A.K.⁴ Holt, M.⁵ D'Aquila, K.⁶ Li, W.⁷

14
- 70450245086
- 10.1109/LED.2009.2032566
- Q. Liu, S. Long, W. Wang, Q. Zuo, S. Zhang, J. Chen, and M. Liu, IEEE Electron Device Lett. 30, 1335 (2009). 10.1109/LED.2009.2032566
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 1335
- Liu, Q.¹ Long, S.² Wang, W.³ Zuo, Q.⁴ Zhang, S.⁵ Chen, J.⁶ Liu, M.⁷

15
- 84862841603
- 10.1109/LED.2012.2196672
- S. Mondal, J. L. Her, F. H. Chen, S. J. Shih, and T. M. Pan, IEEE Electron Device Lett. 33, 1069 (2012). 10.1109/LED.2012.2196672
- (2012) IEEE Electron Device Lett. , vol.33 , pp. 1069
- Mondal, S.¹ Her, J.L.² Chen, F.H.³ Shih, S.J.⁴ Pan, T.M.⁵

16
- 55849137282
- 10.1063/1.3021360
- T.-M. Pan and J.-W. Chen, Appl. Phys. Lett. 93, 183510 (2008). 10.1063/1.3021360
- (2008) Appl. Phys. Lett. , vol.93 , pp. 183510
- Pan, T.-M.¹ Chen, J.-W.²

17
- 0035353394
- 10.1021/la0015213
- B. Erdem, R. A. Hunsicker, G. W. Simmons, E. D. Sudol, V. L. Dimonie, and M. S. El-Aasser, Langmuir 17, 2664 (2001). 10.1021/la0015213
- (2001) Langmuir , vol.17 , pp. 2664
- Erdem, B.¹ Hunsicker, R.A.² Simmons, G.W.³ Sudol, E.D.⁴ Dimonie, V.L.⁵ El-Aasser, M.S.⁶

18
- 84861413865
- 10.1149/2.086206jes
- S. Mondal, J.-L. Her, S.-J. Shih, and T.-M. Pan, J. Electrochem. Soc. 159, H589 (2012). 10.1149/2.086206jes
- (2012) J. Electrochem. Soc. , vol.159 , pp. 589
- Mondal, S.¹ Her, J.-L.² Shih, S.-J.³ Pan, T.-M.⁴

19
- 35348848397
- Improvement in thermal stability of stacked structures of aluminum nitride and lanthanum oxide thin films on Si substrate
- DOI 10.1149/1.2787837
- D. Eom, S. Y. No, H. Park, C. S. Hwang, and H. J. Kim, Electrochem. Solid-State Lett. 10, G93 (2007). 10.1149/1.2787837 (Pubitemid 47588005)
- (2007) Electrochemical and Solid-State Letters , vol.10 , Issue.12
- Eom, D.¹ No, S.Y.² Park, H.³ Hwang, C.S.⁴ Kim, H.J.⁵

20
- 77954321120
- 10.1063/1.3456379
- M.-C. Chen, T.-C. Chang, C.-T. Tsai, S.-Y. Huang, S.-C. Chen, C.-W. Hu, S. M. Sze, and M.-J. Tsai, Appl. Phys. Lett. 96, 262110 (2010). 10.1063/1.3456379
- (2010) Appl. Phys. Lett. , vol.96 , pp. 262110
- Chen, M.-C.¹ Chang, T.-C.² Tsai, C.-T.³ Huang, S.-Y.⁴ Chen, S.-C.⁵ Hu, C.-W.⁶ Sze, S.M.⁷ Tsai, M.-J.⁸

21
- 37549046069
- 10.1063/1.2802990
- C.-Y. Lin, C.-Y. Wu, C.-Y. Wu, T.-Y. Tseng, and C. Hu, J. Appl. Phys. 102, 094101 (2007). 10.1063/1.2802990
- (2007) J. Appl. Phys. , vol.102 , pp. 094101
- Lin, C.-Y.¹ Wu, C.-Y.² Wu, C.-Y.³ Tseng, T.-Y.⁴ Hu, C.⁵

22
- 84859994529
- 10.1063/1.3695078
- Y. Y. Chen, G. Pourtois, C. Adelmann, L. Goux, B. Govoreanu, R. Degreave, M. Jurczak, J. A. Kittl, G. Groeseneken, and D. J. Wouters, Appl. Phys. Lett. 100, 113513 (2012). 10.1063/1.3695078
- (2012) Appl. Phys. Lett. , vol.100 , pp. 113513
- Chen, Y.Y.¹ Pourtois, G.² Adelmann, C.³ Goux, L.⁴ Govoreanu, B.⁵ Degreave, R.⁶ Jurczak, M.⁷ Kittl, J.A.⁸ Groeseneken, G.⁹ Wouters, D.J.¹⁰

23
- 79952661161
- 10.1063/1.3565239
- T.-H. Hou, K.-L. Lin, J. Shieh, J.-H. Lin, C.-T. Chou, and Y.-J. Lee, Appl. Phys. Lett. 98, 103511 (2011). 10.1063/1.3565239
- (2011) Appl. Phys. Lett. , vol.98 , pp. 103511
- Hou, T.-H.¹ Lin, K.-L.² Shieh, J.³ Lin, J.-H.⁴ Chou, C.-T.⁵ Lee, Y.-J.⁶

24
- 70349503989
- 10.1063/1.3231872
- S.-Y. Wang, D.-Y. Lee, T.-Y. Tseng, and C.-Y. Lin, Appl. Phys. Lett. 95, 112904 (2009). 10.1063/1.3231872
- (2009) Appl. Phys. Lett. , vol.95 , pp. 112904
- Wang, S.-Y.¹ Lee, D.-Y.² Tseng, T.-Y.³ Lin, C.-Y.⁴

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