Resistive switching and activity-dependent modifications in Ni-doped graphene oxide thin films

Applied Physics Letters

Volumn 101, Issue 6, 2012, Pages

  Pinto, S ^a   Krishna, R ^b   Dias, C ^a   Pimentel, G ^a   Oliveira, G N P ^a   Teixeira, J M ^a   Aguiar, P ^a   Titus, E ^b   Gracio, J ^b   Ventura, J ^a   Araujo, J P ^a  

^a UNIVERSITY OF PORTO   (Portugal)

^b UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVITY-DEPENDENT; ELECTRODE MATERIAL; FABRICATION METHOD; FABRICATION PROCESS; GRAPHENE OXIDES; METALLIC ELECTRODES; NEUROMORPHIC SYSTEMS; NI-DOPED; NON-VOLATILE MEMORIES; OXYGEN GROUPS; RESISTIVE SWITCHING; VOLTAGE SWEEP;

PHYSICAL PROPERTIES; PHYSICS;

SWITCHING SYSTEMS;

EID: 84865141673     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4742912     Document Type: Article

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